Mo-Terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film

Mo-Terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film.

The catalytic and magnetic properties of molybdenum disulfide (MoS2) are significantly enhanced by the presence of edge sites. One way to obtain a high density of edge sites in a two-dimensional (2D) film is by introducing porosity. However, the large-scale bottom-up synthesis of a porous 2D MoS2 film remains challenging and the correlation of growth conditions to the atomic structures of the e...

Edge-terminated molybdenum disulfide with a 9.4-Å interlayer spacing for electrochemical hydrogen production

Layered molybdenum disulfide has demonstrated great promise as a low-cost alternative to platinum-based catalysts for electrochemical hydrogen production from water. Research effort on this material has focused mainly on synthesizing highly nanostructured molybdenum disulfide that allows the exposure of a large fraction of active edge sites. Here we report a promising microwave-assisted strateg...

Molybdenum Disulfide in Lubricant Applications – a Review

Molybdenum disulfide is one of the best known solid lubricants, and although it originally gained popularity in aerospace and military applications, it is now commonly found in a variety of lubrication applications. It is widely used in greases and specialized grease-like products known as pastes, in fluid lubricants such as automotive and industrial gear oils, in solid film lubricants includin...

Wafer-scale transferable molybdenum disulfide thin-film catalysts for photoelectrochemical hydrogen production

Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts

Silicon nitride stress capping layer is an industry proven technique for increasing electron mobility and drive currents in n-channel silicon MOSFETs. Herein, the strain induced by silicon nitride is firstly characterized through the changes in photoluminescence and Raman spectra of a bare bilayer MoS2 (Molybdenum disulfide). To make an analogy of the strain-gated silicon MOSFET, strain is exer...